METHOD OF FORMING A CONTACT HOLE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a contact hole of a semiconductor device is provided to manufacture a contact hole of which the upper is broader than the lower. CONSTITUTION: A method of forming a contact hole comprises the steps of: sequentially evaporating an insulating layer(2) and a spin on glass layer(3) on a semiconductor substrate(1) having a semiconductor element; selectively etching a part of the spin on glass layer and the insulating layer to expose a specific region of the semiconductor element; and oxidizing the spin on glass layer to be shrunk, forming inclined spin on glass layer in etched area.