发明名称 AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To obtain the amplifier from which a stable amplifier characteristic at a high frequency can be obtained against an ambient temperature change. SOLUTION: The amplifier is provided with a semiconductor amplifier element 1, a bias terminal 2 of the semiconductor amplifier element 1, a 1st resistor 3 that is used to connect the bias terminal 2 to a bias power supply, and a 2nd resistor 4 that connects a connecting point between the 1st resistor 3 and the bias terminal 2 to the ground, and a resistance of the 1st resistor 3 or the 2nd resistor 4 has a high positive temperature coefficient of resistance. Since the resistor having the high positive temperature coefficient of resistance can control a change in a bias terminal voltage of the semiconductor amplifier element when an ambient temperature is subject to change and reduce a change in an idle current of the amplifier, a distortion change at a high frequency can be reduced.
申请公布号 JP2000134043(A) 申请公布日期 2000.05.12
申请号 JP19980303734 申请日期 1998.10.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IWATA MOTOYOSHI;MATSUI KENTA;TAKEHARA HIROYASU;TANAKA TAMOTSU
分类号 H03F1/30;(IPC1-7):H03F1/30 主分类号 H03F1/30
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