发明名称 INSULATION SUBSTRATE FOR AMORPHOUS SILICON THIN-FILM TYPE SOLAR BATTERY
摘要 <p>PROBLEM TO BE SOLVED: To obtain an insulating substrate for an amorphous silicon thin-film type solar battery, having texture structure exhibiting high photoelectric conversion efficiency. SOLUTION: In this insulating substrate, an electrical insulation layer composed of heat resistant resin in which 5-40 vol.% of pigment, whose mean grain diameter is 3-30 nm, is compounded is formed on a metal substrate, and the surface roughness of the electrical insulation layer is adjusted to be Rmax 0.05-1.0μm. Titanium oxide, alumina, silica, etc., are used as the pigment. Polyether sulfone resin, polyimide resin, etc., are used as the heat resistant resin. Thereby very fine pigment particles are dispersed as aggregates in the heat resistant resin layer, so that film cut is not generated in the silicon thin film, and a surface mode having a texture structure effective in improving photoelectric conversion efficiency is obtained.</p>
申请公布号 JP2000133824(A) 申请公布日期 2000.05.12
申请号 JP19980303712 申请日期 1998.10.26
申请人 NISSHIN STEEL CO LTD 发明人 MORI KOJI;WATANABE KEIICHI;OKUBO KENICHI;KOSHIISHI KENJI
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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