发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To realize multilayer wiring which has high reliability. SOLUTION: This device 100 contains a first wiring layer 20, an interlayer insulating layer 30 formed on the first wiring layer 20, a second wiring layer 60 formed on the interlayer insulating layer 30, a plurality of through-holes 40 for connecting the first wiring layer 20 and the second wiring layer 60, and contact layers 50 formed in the plurality of through-holes 40. At least one of the through-hole 40 is so constituted that at least one part of the first wiring layer 20 is eliminated, and the bottom surface is a continuous surface constituted of a surface 30a of the interlayer insulating layer and a surface 20a of the first wiring layer.
申请公布号 JP2000133711(A) 申请公布日期 2000.05.12
申请号 JP19990204719 申请日期 1999.07.19
申请人 SEIKO EPSON CORP 发明人 KASUYA YOSHIKAZU
分类号 H01L21/302;H01L21/3065;H01L21/768;H01L23/522;H01L27/00;(IPC1-7):H01L21/768;H01L21/306 主分类号 H01L21/302
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