| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a memory cell part can be tested in a short time. SOLUTION: A read data/comparison data select circuit 107 outputs either parallel data WT0-WT7 before written to a memory cell part or parallel data CR0-CR7 read out from the memory cell part. The CR0-CR7 from the circuit 107 or data CW0-CW7 from a serial/parallel converter circuit 102 are compared with data RT0-RT7 read out from the memory cell part by a comparison circuit 106. When the RT0-RT7 and comparison data all agree, the comparison circuit 106 outputs an 'H'. When the data disagree, the comparison circuit outputs an 'L'. Because of two comparison data, i.e., data CW0-CW7 and CR0-CR7, the number of times for setting the comparison data can be reduced, whereby a time required for testing the semiconductor memory is shortened.
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