| 摘要 |
<p>A wafer support wheel (20) in an ion implanting device (10) is rotated by a first drive motor (34) and swung by a second drive motor (36). A control device (42) stores in advance a plurality of controlling swing speed modes in each of which one of two basic swing speed modes switches to the other at a mid-point within a swing range of the wafer support wheel (20), and controls the second drive motor (36) according to a controlling swing speed mode selectively input via an input device (40). Swinging of the wafer support wheel (20) within the swing range will form two different dosage regions corresponding to the two basic swing speed modes in each wafer.</p> |
