摘要 |
PROBLEM TO BE SOLVED: To improve a resistance rate to a surge and the like in an ignition coil built-in condition where an using environment is closely by forming a part of a circuit for controlling primary current of an ignition coil with an insulating gate shaped bipolar transistor, and forming an inner gate electrode with cells having two differential shapes. SOLUTION: An insulating gate type bipolar transistor is provided with three terminals of a gate G as a connecting terminal to an outside, a collector C, and an emitter E, Zener diode ZD1 for protection and a resistor R1 are connected between the gate G and the emitter E. Bidirectional Zener diode ZD2 made of polysilicone is connected between the collector C and the gate G, in order to cramp high voltage (flyback voltage) for generating primary current of an ignition coil at the time of breakage. A gate (G) pad and an emitter (E) pad are arranged on a chip surface, a chip back surface is formed as a collector electrode, and a gate wiring insulated by an insulating layer of SiO2 is arranged in a lattice shape.
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