| 摘要 |
A method for producing a semiconductor device capable of stably removing a sidewall mask layer without removal of an etching stopper film, wherein a conductive layer 30 and a first diffusion layer 11 are formed in a semiconductor substrate 10, an etching stopper film 21 is formed covering the conductive layer 30, a sidewall mask layer 31b containing silicon is formed at an upper layer of the etching stopper film 21 facing a sidewall surface of the conductive layer 30, and a second diffusion layer 12 is formed. Here, a conductive impurity is introduced into at least the sidewall mask layer 31b at either of the time of formation of the sidewall mask layer 31b or the time of formation of the second diffusion layer 12, and heat treatment for activating the conductive impurity in the sidewall mask layer 31b is applied. Next, the sidewall mask layer 31b is removed, and the insulating film 22 is formed over the entire surface at an upper layer of the etching stopper film 21, and a contact hole CH reaching the second diffusion layer 12 is formed in the insulating film 22.
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