| 摘要 |
PCT No. PCT/RU96/00288 Sec. 371 Date Aug. 3, 1999 Sec. 102(e) Date Aug. 3, 1999 PCT Filed Oct. 10, 1996 PCT Pub. No. WO98/15977 PCT Pub. Date Apr. 16, 1998In a power microwave hybrid integrated circuit, a depth of recesses (2) in a metal base (1) is selected so that a face surface of chips (3) and a metal base (1) are coplanar, a dielectric board (5) has a shield ground metallization (10) on its back side at the places adjoining the metal base (1), the metal base (1) is sealingly joined and electrically connected to the shield grounding metallization (10) of the board (5), and interconnecting holes (7) of the board (5) are filled with an electrically conducting material (9), the spacing between the side surfaces of the chips (3) and the side surfaces of the recesses (2) in the base (1) being of 0.001 to 0.2 mm.
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