A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to implement an ultra-fine line width with no tap without mask misalignment and to easily implement a bit line capping. CONSTITUTION: A method for manufacturing semiconductor devices forms an interlayer oxide film(32) on a conductive layer(31) with which a bit line will contact. A portion of the interlayer oxide film(32) at the contact portion of the bit line is selectively etched to form a groove having the size greater than the contact size of the bit line. A spacer nitride film(35) for capping the sidewall of the bit line is formed at the sidewall of the groove. The interlayer oxide film(32) at the contact portion of the bit line is selectively etched to form a bit line contact hole. A portion of the bit line contact hole is filled with a bit line conductive layer(39). A nitride film(41) for capping an upper portion of the contact hole is formed in the remaining portion of the contact hole that was not filled with the bit line conductive layer(39).