METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WHICH HAVIG A DIFFERENT THICKNESS GATE OXIDE STRUCTURE IN A SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to solve the problem that a process margin is difficult to secure by completely removing residues remaining on a substrate. CONSTITUTION: A method for manufacturing semiconductor devices performs an oxidization process for forming the first gate oxide film on a semiconductor substrate(10). After a photoresist film is applied on the oxide film formed by the oxidization process, a photolithography development process is performed by which the photoresist film is patterned to form a photoresist pattern(11). A wet etch process is performed by which the oxide film is etched using the photoresist film pattern as an etch mask to form the gate oxide film pattern through which the underlying semiconductor substrate is exposed(12). A photoresist film stream process is performed by which the photoresist pattern remaining on the first gate oxide film pattern is removed(13). A cleaning process is performed for the exposed surface of the first gate oxide film pattern and the exposed surface of the semiconductor substrate(14). An oxidization process is performed by which the second gate oxide film having a different thickness from the first gate oxide film pattern is formed at a given region(15).