| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM equipped with a trench capacitor and a storage node and manufacturing method thereof, where the DRAM can be prevented from increasing in contact resistance, and crystal defects can be prevented from occurring. SOLUTION: A trench 16 is provided to a semiconductor board 10, the inner surface of the trench 16 is coated with insulating films 17 and 18, and the trench 16 is filled up with a polycrystalline silicon film 19 for the formation of a storage node. The upper surface of the polycrystalline silicon film 19 is covered with an insulating film 20, and the upper space above the insulating film 20 is filled up with a polycrystalline silicon film 22 for the formation of a storage node contact. At this point, when the polycrystalline film 22 is formed, an upper empty space over the polycrystalline silicon film 19 is filled up with a resist film 21 once, the top surface of the insulating film 20 is set as high as prescribed by etching, then the resist film 21 is removed, and a polycrystalline silicon film 22 can be filled up into the empty space without leaving any space. |
