CAPACITOR OF SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To restrain increase of a contact resistance by preventing oxidation of a diffusion prevention film by forming a second conductive film pattern for a capacitor lower electrode filling up a second contact hole and forming a high dielectric film and a third conductive film pattern for a capacitor upper electrode. SOLUTION: A second layer insulation film pattern 41 with a second contact hole 40 which exposes a surface of a first conductive film pattern 39 is formed on a first layer insulation film pattern 33 and a first conductive film pattern 39. A second conductive film pattern 43 for a capacitor lower electrode is formed to be connected to the first conductive film pattern 39 filling in a second contact hole. A high dielectric film 45 is formed to enclose the second conductive film pattern 43. A third conductive film pattern 47 for a capacitor upper electrode is formed on the high dielectric film 45. As a result, a contact resistance can be reduced by preventing oxidation of the diffusion prevention film pattern 37.