发明名称 LINE MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To be excellent in rapid response and to make suitable to an IC with a small circuit scale by successively switching a semiconductor storage device used for recording in each write operation and performing writing when writing operations intermittently take place to reading operations. SOLUTION: This memory has a memory control circuit 2 which controls writing and reading to/from (n) pieces of RAMs 5 recording digital 1st image data and sends a signal selecting a 1st RAM to input and output switching circuits 4 and 7 when an input read enable signal becomes active for the first time in horizontal scanning. With this, the read address of the 1st RAM is set to enable, a latch pulse is set to active, and data written in an address at one previous horizontal scanning is read and is outputted from the circuit 7. Next, data written to a 2nd RAM and up to the n-th RAM in succession are read and outputted from the circuit 7. Then, the total of the storage capacity of the entire RAMs has only to coincide with the number of the pixels and a memory configuration becomes extremely small.
申请公布号 JP2000125188(A) 申请公布日期 2000.04.28
申请号 JP19980298691 申请日期 1998.10.20
申请人 SONY CORP 发明人 KOJIMA HIROYUKI;MIYAZAKI SHINICHIRO;SHIRAHAMA AKIRA;SUGAYA HIROSHI
分类号 H04N5/262;H01L27/146;(IPC1-7):H04N5/262;//H01L27/1 主分类号 H04N5/262
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