| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photomask which can transfer patterns of desired pattern sizes by correcting the mask patterns of the photomask in a microunit. SOLUTION: This photomask is a photomask of a 4-times reticle used at the time of transfer of wiring patterns on a wafer by a reduction stepper and has plural pieces of the mask patterns 10 in series and parallel. The mask patterns have a mask pattern body 12 resembling the transfer patterns and projecting part patterns 16 disposed over the entire line of one 14A of longitudinal direction pattern boundaries 14A, B facing each other of the mask pattern body. The projection height H of the projecting part patterns 16 is about 20 nm and the projection width W is about 20 nm. The pitch P is multiple of the projection width W and is, for example, 80 nm.</p> |
