| 摘要 |
PROBLEM TO BE SOLVED: To connect a wiring accurately and readily by forming a contact hole to self-align selectively etching a mask insulation film and an etching stoppage film and forming an upper wiring and a second contact plug by filling a pattern groove and a contact hole with conductive substance. SOLUTION: A pattern groove is formed in silicon oxide film. A silicon nitride film exposed to a bottom part of a pattern groove and a silicon nitride film mask insulation film used for connection pad formation are removed selectively and a contact hole 26 is formed on a polysilicon pad to self-align. The contact hole 26 and a patter groove are filled with conductive substance. Conductive substance is deposited as a conductive film 27. The conductive film 27 is etched back, a pattern groove and the contact hole 26 are filled up, and an upper wiring 28 is formed. As a result, a conductive film which is hard to finely process can be readily used as an upper wiring without requiring a lithography process of bit contact. |
