| 摘要 |
PROBLEM TO BE SOLVED: To improve the efficiency of the deposition in manufacturing elements by vacuum deposition of a nonprecious metal and enable the laser trimming for making vias, by using a dielectric resin for isolating single wire lines for a silicon-based high frequency integrated circuit structure. SOLUTION: An amount of polyimide(PI) 11 enough to form a hardened layer of 157μm is spin-coated on a wafer and hardened at about 400 deg.C. On the hardened PI 11 the laser trimming is applied up to each end terminal stud via to form vias 15 with inclined walls 13 rounded at an angle of about 62 deg.. For the electric connection between transmission lines, an AlCu top metallization layer 20 of about 2-2.5μm thick is sputter-deposited on the PI 11, including the inclined walls 13 of the electrode stud vias and parts along the bottoms thereof. The AlCu metallurgy is with 0.5-5.0 wt.% of Cu. After the photolithography, an upper metal is etched in the form of a transmission line. |
