| 摘要 |
PROBLEM TO BE SOLVED: To prevent the peeling of a resist film and to increase the production yield by controlling the conditions in such a manner that nickel atoms enter the surface of a master while the nickel atoms vaporized from a vapor source hardly collide with one another till the atoms reach the master surface and that a nickel film can be uniformly formed on a resist film having grooves or pits formed on the master surface. SOLUTION: After a vacuum chamber is evacuated, argon gas is introduced into an ion source to produce plasma, from which ion beams are drawn to irradiate a nickel target to sputter nickel particles. The particles are made to irradiate and deposit on the surface of a master to form a nickel film. In this method, the operational pressure is low, and therefore, by controlling the distance between the ion source and target and between the target and substrate to be shorter than the average free path under the operational pressure, the vaporized particles can reach the substrate without collision with one another, and thus nickel sputtered particles substantially parallel to one another are made to enter the master surface.
|
