发明名称 |
Blankophotomaske und Phasenverschiebungsmaske |
摘要 |
A phase shift photomask and a photomask blank used to produce the same. A dry etching stopper layer (102), which is disposed between a substrate (101) and a light-shielding layer (103) or between the substrate and a phase shifter layer, is made of either a film mainly composed of tin oxide nitride, which has high etching selectivity and high permeability, or an alumina film formed by sputtering, followed by heat treatment carried out in an oxidizing atmosphere, thereby enabling the required overetching to be satisfactorily performed during etching of the phase shifter layer, and thus making it possible to effect precise phase control. In addition, it is possible to eliminate the occurrence of an in-plane transmittance distribution. <IMAGE> |
申请公布号 |
DE69328140(D1) |
申请公布日期 |
2000.04.27 |
申请号 |
DE1993628140 |
申请日期 |
1993.08.06 |
申请人 |
DAI NIPPON PRINTING CO., LTD. |
发明人 |
MOHRI, HIROSHI;HASHIMOTO, KEIJI;TAKAHASHI, MASAHIRO;GOTO WATURU, TOKYO 162 |
分类号 |
H01L21/027;G03F1/00;(IPC1-7):G03F1/14 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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