| 摘要 |
PROBLEM TO BE SOLVED: To make a quantum wave interference layer functioning as a carrier reflection layer having a high reflectivity by determining the thicknesses of a first and second layers of the quantum wave interference layer functioning so that the emitted light intensity of a light emitting element having the quan tum wave interference layer is near a max. value. SOLUTION: On a substrate 10 a buffer layer 12, an n-type contact layer 14, an n-type clad layer 16, a light emitting layer 18 and an electron reflective layer 20 to be a quantum wave interference layer are formed in this order. The electron reflective layer 20 has a 15-period multilayer quantum structure composed of a first p-GaInP layer W and a second p-AlInP layer B with a p-AlGaInP δ layer formed at the boundary of the first and second layers W, B. After examining the relation between the thicknesses of the first and second layers W, B and the light emitting power, it results that when the first and second layers W, B are 5 nm and 7 nm thick, the light emitting power is max. |
