| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce heat dissipation from the periphery of a wafer and allow a wafer to be uniformly heated, by forming a recess for receiving a wafer on one major surface of a plate-shaped ceramic body with a resistance heating element buried therein, and using the bottom face of the recess for wafer placement. SOLUTION: A recess 5 for receiving a semiconductor wafer W is formed in one major surface 2a of a plate-shaped ceramic body 2, the bottom face of the recess 5 is used for wafer W placement 4, and a resistance heating element 3 is buried in the ceramic body 2. The depth of the recess 5 is so controlled that it is equal to or greater than the thickness of a wafer W. Since the wafer W can be heated not only from the placement face 4 but also indirectly from the side walls of the recess 5, heat dissipation from the periphery of wafers W can be significantly reduced and the temperature distribution of a wafer W can be unified. Further, it is unnecessary to heat a heater 1 to a temperatures higher than necessary, and power consumption can be reduced.</p> |
