| 摘要 |
PROBLEM TO BE SOLVED: To increase the accuracy of a wafer and to reduce the total cost of raw materials by a method, wherein a chamfered mirror finishing process is applied out of processes used to change the chamfered part of the wafer into a mirror-surface finish with a low strain, and the required main face of the chamfered wafer is mirror-surface polished last. SOLUTION: A double-sided grinding process or a double-sided primary polishing process which works a wafer by holding the wafer with a carrier or by holding the wafer by other methods is performed. After that, the end face of the wafer is finished with high accuracy and at low strain by very fine fixed abrasive grains in a low-strain chamfering process, in which a soft grinding operation with good contact with a chamfered part is executed. Consequently, the wafer whose face width is uniform can be manufactured, and it is possible to prevent the cross-sectional shape collapse of the chamfered part due to contact with the carrier or the like. In the low-strain chamfering process, a whetstone for outer circumferential grinding and a notch grinding whetstone which are turned at high speed are arranged in the outer circumferential part of a rotary table which can vacuumize to suck and hold the wafer by, e.g. a vacuum suction operation and which is turned at high speed.
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