| 摘要 |
<p>The present invention is directed to a method of forming conductive interconnections (39) on an integrated circuit device and an integrated circuit device comprising the same. The method is comprised of forming first (16) and second (24) layers of dielectric materials that are selectively etchable with respect to one another. The method also comprises forming the second layer (24) above the first layer (16) and in a previously defined opening (20) in the first layer (16). The method further comprises removing portions of the second layer (24) to define an opening (30) therein and to remove the portion of the second layer (24) previously deposited in the opening (20) in the first layer (16). Thereafter, a conductive material is positioned in both of the openings (20, 30) in the first and second layers (16, 20). The integrated circuit device is comprised of first and second layers (16, 20) of dielectric material having openings (20, 30) formed therein and an integrally formed conductive structure (39) formed only in said openings in said first and second layers.</p> |
