发明名称 |
Deposition chamber with a biased substrate configuration |
摘要 |
Disclosed is PVD deposition chamber which is modified with an electrical circuit that allows a voltage bias to be applied to any one or more of a target, an in-process integrated circuit wafer, and collimator. The collimator can also be isolated from the electrical circuit. This configuration allows a preclean of the in-process integrated circuit wafer in situ in the PVD deposition chamber by ion sputtering and a subsequent sputter deposition through the collimator. A method is also disclosed wherein an in-process integrated circuit wafer is first precleaned in the PVD deposition chamber by applying a negative voltage bias to the in-process integrated circuit wafer. A film of conducting material is then sputter deposited on the surface of the in-process integrated circuit wafer by applying a negative voltage bias to the target. The collimator is electrically isolated during this process or is set at a higher potential than the in-process integrated circuit wafer. A voltage bias can also be applied to the in-process integrated circuit wafer during the deposition, and its magnitude proportioned to modify the morphology of the film being deposited. Once the deposition is conducted, a negative voltage bias can be applied to the collimator to sputter clean the collimator.
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申请公布号 |
US6051121(A) |
申请公布日期 |
2000.04.18 |
申请号 |
US19980149705 |
申请日期 |
1998.09.08 |
申请人 |
MICRON TECHNOLOGY INC |
发明人 |
GIVENS, JOHN H.;LEIPHART, SHANE B. |
分类号 |
C23C14/34;C23C14/56;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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地址 |
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