UNDERCOATING COMPOSITION FOR PHOTOLITHOGRAPHIC RESISTAND PHOTOLITHOGRAPHIC PATTERNING RESIST MATERIAL

摘要

PURPOSE: To provide a primary coating material for lithography capable of sufficientrily suppressing the light reflected on a substrate, and forming an accurate resist pattern for the mask pattern without causing intermixing or notching, and having large selectivity ratio, by providing a primary coat layer between the substrate and a resist layer, and to provide a resist material for lithography using the material. CONSTITUTION: This primary coating material for lithography contains (A) a UV-absorbent selected from benzophenone compds. having at least one amino group or alkyl-substd. amino group and azomethine compds. and (B) a crosslinking agent selected from nitrogen-contg. compds. having at least two amino groups with substitution of hydroxyalkyl groups or alkoxyalkyl groups. The component (A) and (B) are included by 1:1 to 1:10 weight ratio. The resist material is obtd. by forming the base material above described on a substrate and then forming a radiation sensitive resist layer thereon.