METHOD FOR FABRICATING MOS-TYPE FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A method for fabricating a MOS-type field effect transistor is provided to reduce a surface leakage current by making a parasitic capacitance between a gate electrode and a source/drain region. CONSTITUTION: A conductive well(12) is formed by implanting a first conductive impurity in a semiconductor substrate(10) having an isolation film(14). The first conductive impurity is implanted around a surface of the conductive well to adjust a threshold voltage of a device. An amorphous poly silicon film is formed at an upper part of the conductive well, and then the resultant structure is annealed so as to be crystallized the film as a channel preventing film. After depositing an insulating film and a conductive film on an upper part of the channel preventing film, an impurity region, in which a second conductive impurity is implanted, is formed at the conductive well around a lower part of a gate electrode(22) edge.