发明名称 |
SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULATING EPITAXY |
摘要 |
<p>A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.</p> |
申请公布号 |
WO2007149849(A1) |
申请公布日期 |
2007.12.27 |
申请号 |
WO2007US71549 |
申请日期 |
2007.06.19 |
申请人 |
SEMISOUTH LABORATORIES, INC.;MAZZOLA, MICHAEL, S. |
发明人 |
MAZZOLA, MICHAEL, S. |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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