| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to improve reliability of the contact by preventing the formation of a key hole on a top surface of the contact. CONSTITUTION: In the method, a lower metallization layer(12) is formed on a semiconductor wafer(11), and the first TEOS layer(13) is deposited over the semiconductor wafer(11) and the lower metallization layer(12). The first TEOS layer(13) is then selectively etched to expose a portion of the lower metallization layer(12), and a tungsten(14) to be used for the contact is selectively grown on the exposed portion of the lower metallization layer(12). Next, the second TEOS layer(15) is deposited over the tungsten(14) and the first TEOS layer(13), and then planarized by chemical mechanical polishing until a planar top portion of the tungsten(14) is exposed.
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