| 摘要 |
PURPOSE: A method for forming an isolation structure of a semiconductor device is provided to enable the prevention of the scattered reflection of light in a following photolithographic etching process. CONSTITUTION: In the method, a pad oxide layer(2) and a nitride layer are sequentially formed on a substrate(1). A photoresist pattern is then formed on the nitride layer to expose a portion of the nitride layer, and the exposed portion of the nitride layer is etched to expose a corresponding portion of the pad oxide layer(2). Next, after the photoresist pattern is removed, the exposed portion of the pad oxide layer(2) is oxidized to form a field oxide layer(4). Thereafter, upper surfaces of the nitride layer and the field oxide layer(4) are planarized to lie in the same plane. A remaining part of the planarized nitride layer is then removed, and the planarized field oxide layer(4) is etched to have an upper surface coplanar with that of the pad oxide layer(2).
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