| 摘要 |
PURPOSE: A semiconductor device and a fabrication method thereof are provided to improve characteristics of the device and to simplify the fabrication process. CONSTITUTION: The device includes a substrate(41) in which a buried insulating layer(43) is formed, isolation regions(45) formed at predetermined portions below a surface of the substrate(41) and contacted with the buried insulating layer(43), a gate electrode(49a) formed on an active area of the substrate(41) between the isolation regions(45), sidewall spacers(55) formed on both sides of the gate electrode(49a) to have a thickness greater than that of the gate electrode(49a), and source and drain regions(59,59a) formed in the active area of the substrate(41) to have LDD regions(53) formed beneath the surface of the substrate(41) at both sides of the gate electrode(49a). In particular, the device has a damage layer(57) formed above a boundary of the buried insulating layer(43) and underneath the gate electrode(49a) by implanting ions into the entire surface. The damage layer(57) just under the gate electrode(49a) reduces floating body effect, thereby improving characteristics of the device.
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