| 摘要 |
PURPOSE: A method of manufacturing a flash EEPROM in a semiconductor device is provided to implement a flash EEPROM having a large scale and high density by minimizing an isolation area. CONSTITUTION: An oxide(2) is formed on a substrate(1), and a gate insulating layer(4), a second polysilicon layer(5), an ONO layer(6) and a third polysilicon layer(7) are sequentially formed on overall structure after patterning a first polysilicon layer(3) on a surface of the oxide(2) except isolation areas between respective cells. Then, the gate insulating layer(4), second polysilicon layer(5), ONO layer(6) and third polysilicon layer(7) on the first polysilicon layer(3) except channel areas of respective cells are removed, and a source/drain(8) is formed by implanting ions.
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