SEMICONDUCTOR DEVICE ESD PROTECTION CIRCUIT

摘要

PURPOSE: An ESD(Electro Static Discharge) protection circuit of a semiconductor device is provided to increase the dimension of second breakdown current of unit area of a device used as the ESD protection circuit, thereby enhancing ESD characteristics. CONSTITUTION: A p-well(22) is formed on a n type semiconductor substrate(21). An insulating layer(23) of predetermined depth is formed on the semiconductor substrate(21). A body layer(24) is formed by implanting n type impurities into all surface of the semiconductor substrate(21) including the insulating layer(23). A gate oxide(25) and a gate electrode(26) are formed on a portions on the body layer(24). Source/drain areas(28,27) are formed on the body layer of both sides of the gate electrode(26). a pad is connected to the drain area(27). A ground line(Vss) is commonly connected to the gate electrode and source area.