发明名称 Fast read-amplifier for amplifying binary data signals read from semiconductor store memory cell
摘要 A read-amplifier (PSA,NSA) for amplifying binary data signals is arranged between two mutually complementary bit-lines (BITLR,BITR) each connected to a storage column of the semiconductor store. A semiconductor switch (P3,N3) has its load output (P,N) connected to the read amplifier (PSA,NSA) and switches a supply potential (VDD,VSS) to the read-amplifier (PSA,NSA). A reference voltage source (VDD;VSS) provides a reference potential (VREF1,VREF2) switched to the load output (P,N) of the semiconductor switch (P3,N3), in which the absolute value of the reference potential (VREF1,VREF2) is less than or equal to the difference of the supply potential (VDD,VSS) and the working voltage of the semiconductor switch (P3,N4).
申请公布号 DE19844968(A1) 申请公布日期 2000.04.13
申请号 DE19981044968 申请日期 1998.09.30
申请人 SIEMENS AG 发明人 JAIN, RAJ KUMAR
分类号 G11C7/06;G11C7/14;(IPC1-7):G11C7/06 主分类号 G11C7/06
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