发明名称 Thermal-stress-resistant semiconductor sensor
摘要 A semiconductor sensor is provided with a good temperature characteristic, the sensor being capable of preventing a pressure or acceleration detection characteristic from being affected by a change of the surrounding temperature. A semiconductor chip is provided approximately in the center of a die pad of a lead frame and detects a displacement amount corresponding to a pressure or an acceleration. The displacement amount is converted into an electric signal and output. A resin mold is formed so as to cover the semiconductor chip. A thermal-stress-relieving buffer ring is provided on the die pad so as to surround an external circumference of the semiconductor sensor chip thereby preventing stress caused by thermal expansion/contraction of the resin mold from being directly applied to the semiconductor chip from the side.
申请公布号 US6049120(A) 申请公布日期 2000.04.11
申请号 US19970869770 申请日期 1997.06.05
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OTANI, HIROSHI;YAMAGUCHI, YASUO;TOMIOKA, MASANORI
分类号 G01P21/00;G01L9/00;G01L9/04;G01L19/04;G01P1/00;G01P1/02;G01P15/12;(IPC1-7):H01L23/495 主分类号 G01P21/00
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