发明名称 |
Thermal-stress-resistant semiconductor sensor |
摘要 |
A semiconductor sensor is provided with a good temperature characteristic, the sensor being capable of preventing a pressure or acceleration detection characteristic from being affected by a change of the surrounding temperature. A semiconductor chip is provided approximately in the center of a die pad of a lead frame and detects a displacement amount corresponding to a pressure or an acceleration. The displacement amount is converted into an electric signal and output. A resin mold is formed so as to cover the semiconductor chip. A thermal-stress-relieving buffer ring is provided on the die pad so as to surround an external circumference of the semiconductor sensor chip thereby preventing stress caused by thermal expansion/contraction of the resin mold from being directly applied to the semiconductor chip from the side.
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申请公布号 |
US6049120(A) |
申请公布日期 |
2000.04.11 |
申请号 |
US19970869770 |
申请日期 |
1997.06.05 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OTANI, HIROSHI;YAMAGUCHI, YASUO;TOMIOKA, MASANORI |
分类号 |
G01P21/00;G01L9/00;G01L9/04;G01L19/04;G01P1/00;G01P1/02;G01P15/12;(IPC1-7):H01L23/495 |
主分类号 |
G01P21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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