| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for implanting ions, using a dose measuring cup for dose measurement for controlling ion implantation. SOLUTION: A processing chamber 12 is formed with an inner chamber, and one or more works is inserted for ion implantation. An energy source 40 forms ion plasma in the processing chamber. A carrier 30 positions the work in an inner area 24 of the processing chamber. A surface to be implanted is arranged in the ion plasma. A pulse generator 50 applies electric pulses for attracting the ion to the carrier. One or more dose measuring cups 60 have an electrically biased ion concentration surface, and this surface is arranged around the carrier of the work to measure the implanting current. An implantation control device 195 controls the ion implantation of the work, while monitoring the signal from the dose measuring cups 60.
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