发明名称 |
Transistor having an improved salicided gate and method of construction |
摘要 |
A method of fabricating a transistor having an improved salicided gate is provided. The method may include forming a gate (14) that is separated from a substrate (12) by a gate insulator (16). A spacer (22) may be formed proximate the gate (14) such that the spacer (22) exposes a top region (28) and a side region (30) of the gate (14). The top region (28) and the side region (30) of the gate (14) may be irradiated at an angle (38) to form a post amorphous region (32) within the gate (14). A reactive layer (42) may be formed adjacent the post amorphous region (32). A salicidation region (44) may be then formed between the post amorphous region (32) and the reactive layer (42). The reactive layer (42) may be removed to expose the salicidation region (44).
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申请公布号 |
US6048784(A) |
申请公布日期 |
2000.04.11 |
申请号 |
US19980212189 |
申请日期 |
1998.12.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HONG, QI-ZHONG;KITTL, JORGE A. |
分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L29/49;(IPC1-7):H01L21/320;H01L21/477 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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