| 摘要 |
PROBLEM TO BE SOLVED: To obtain high performance and high reliability in a low-temperature step by generating a hydrogen activated species by a plasma consisting of a mixture obtained by mixing a noble gas with a hydrogen-containing gas, in first to third steps in which a semiconductor film and an insulating film are formed and these films are irradiated with the hydrogen activated species. SOLUTION: An underlayer protective film 102 is formed by depositing a silicon oxide film on a glass substrate 101. A crystalline semiconductor film (polysilicon film) is formed as a semiconductor film on the film 102 (first step), after which the crystalline semiconductor film is island-structured to form an island 103 of the semiconductor film which later becomes an active layer of a semiconductor device. Then, a silicon oxide film 104 is formed by a PECVD method in such a manner as to cover the patterned island 103 (second step). Then, the film (island) 103, the film 104 and the interface between these films 103 and 104 are irradiated with a hydrogen activated species, i.e., the atomic activated species of a hydrogen-containing gas generated by the plasma of a gas formed by mixing a noble gas (helium or the like) with a hydrogen- containing gas (third step).
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