| 摘要 |
PROBLEM TO BE SOLVED: To prevent the downward propagation of the crack-generating region when a lead is compressed to a bump electrode with a conductor film and to suppress the short circuit with an element region. SOLUTION: The following parts are provided: a field oxide film 110 formed on the surface of a semiconductor substrate 109; a first interlayer insulating film 106 formed on the film 110; a bonding pad, which is connected with a connecting port 104 of a second interlayer insulating film 103 formed on a first metal wiring 102 formed on the film 1-6; and conductor film 105, which is separately provided from an element forming region 108 formed on a semiconductor substrate 109 on the field oxide film under the connecting port 104 of the second interlayer insulating film. Furthermore, a connecting port 107 having the rectangular shape and the intended dimensions, to which the film 105 and the first metal wiring 102 are connected, is arranged from the region of the first interlayer insulating film under the connecting port 104 of the second interlayer insulating film to the element region in the vicinity. Furthermore, the port is arranged perpendicular to the longitudinal direction in the direction of the element region. |
