| 摘要 |
PROBLEM TO BE SOLVED: To improve the production efficiency of a photoconductive conversion device and to improve the performance by speeding up the film forming speed of a crystalline silicon thin-film photoconductive conversion layer formed through a low temperature plasma CVD method. SOLUTION: In this method, the distance between plasma discharge electrodes is set to be within 1.5 cm, the reaction chamber pressure to be not less than 5 Torr, the flow rate ratio of hydrogen gas with respect to silane gas in reaction gas to be not less than 100 times and plasma discharge power density to be not less than 100 mW/cm2 as conditions for stacking a crystalline photoconductive conversion layer by a plasma CVD method. The rate of silane gas with respect to hydrogen in reaction gas, blown off from the prescribed unit area of a gas blow-off electrode, is increased as reaction gas introduced from the gas blow-off electrode 310 advances to a down stream side, where it flows between the electrodes. |
