发明名称 ELECTRODE STRUCTURE, THERMOELECTRIC ELEMENT USING THE SAME, AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To obtain an electrode structure which can be manufactured with a few number of manufacturing steps in a short time and which is low in resistance and superior in thermal conductivity, and to obtain a thermoelectric element using the structure as well as a method for manufacturing the element. SOLUTION: This thermoelectric element includes two Cu-made electrodes 1 and 2, an n-shape SiC semiconductor bulk 4 provided on the electrode 1 via an Ni sheet 6, a p-type semiconductor bulk 5 provided on the electrode 2 via an Al sheet 8, and a single Cu-made metal electrode 3 provided on the semiconductor bulks 4 and 5 via Ni and Al sheets 7 and 9.
申请公布号 JP2000100751(A) 申请公布日期 2000.04.07
申请号 JP19980271946 申请日期 1998.09.25
申请人 SANYO ELECTRIC CO LTD 发明人 TAKAHASHI KAZUHIKO
分类号 H01L35/32;H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L35/32
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