| 摘要 |
PROBLEM TO BE SOLVED: To realize a film-forming method for a group III nitride semiconductor film which can form a satisfactory group III nitride semiconductor film, and especially, can accurately control mixed crystal ratio. SOLUTION: A plurality of HWE(hot wall epitaxy) furnaces 2a-2d are disposed upright, parallel with each other and arranged in a chamber 1. Different solid sources are accommodated in the HWE furnaces 2a-2d, substrates 9 held above the furnaces are moved to the upper side of the selected HWE furnace in sequence, and film is formed. In the formation process of an InGaN film, In and Ga are simultaneously accommodated in one HWE furnace, heated and evaporated, and NH3+N2 as nitrogen source is supplied above the HWE furnace from the outside. At this time, control for mixed crystal ratio is performed by controlling a heating temperature of the substrate 9 with a heater 10.
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