发明名称 CIRCUIT DESIGN METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a circuit design method for obtaining high calculation precision with less parameter in a large signal simulation. SOLUTION: In the design method of a circuit using a field effect transistor, the field effect transistor is shown as a two terminal non-linear circuit model source constituted of the parallel connection of a current source 6, where a gate terminal is opened in a use frequency band and whose current changes dependently on voltage, and a capacitor 5 between a source and a drain. Then, element parameter in a large signal operation whose amplitude of input voltage, which is decided by the impedance of the circuit and input voltage, is large is obtained.</p>
申请公布号 JP2000099559(A) 申请公布日期 2000.04.07
申请号 JP19980271429 申请日期 1998.09.25
申请人 NEC CORP 发明人 MIZUTANI HIROSHI
分类号 H01L29/78;G06F17/50;H01L21/336;H01P1/15;(IPC1-7):G06F17/50 主分类号 H01L29/78
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