| 摘要 |
PROBLEM TO BE SOLVED: To improve energy conversion efficiency by preventing the destruction in the p-n junction part of a semiconductor substrate. SOLUTION: Dry etching is executed, and fine irregularities 2 are formed on a polycrystalline silicon substrate. Then, wet etching is executed, and the corners of the irregularities are made smooth. Then, impurity diffusion is conducted on the polycrystalline silicon substrate 1, and p-n junction part is formed after etching. A conductive paste is burnt on the surface and the back of the polycrystalline silicon substrate 1, and surface electrodes 7 and a back electrode 6 are formed. |
