METHOD OF FORMING PHOTORESIST PATTERN BY USING DOUBLE EXPOSURE

摘要

PURPOSE: A method of forming a photoresist pattern is provided which does not decrease a line width even in using a double exposure. CONSTITUTION: A method of forming a photoresist pattern comprises the steps of: applyingphotoresist to a semiconductor substrate where a predetermined material layer is formed; performing a first exposure by using a first mask regarding the first photoresist; forming a passivation layer on a surface of the photoresist lighted by the first exposure; performing a second exposure by using a second mask regarding the photoresist having the passivation layer; and forming a photoresist pattern by developing the photoresist and eliminating photoresist and a glass layer in an exposed region.