发明名称 ACCELERATION ENERGY REAL-TIME MONITORING DEVICE OF SEMICONDUCTOR ION IMPLANTATION DEVICE
摘要 PURPOSE: Acceleration energy real-time monitoring device senses acceleration energy at a disk rear end of an ion implantation chamber, displays the acceleration energy, and measures/monitors acceleration energy of ion beam in real time. CONSTITUTION: Acceleration energy real-time monitoring device of a semiconductor ion implantation device includes ion beam sensor(44a-44e) for sensing ion beam passing through a disk, a converter(56) for converting the output signal of the ion beam sensor to a voltage, a sensor, a controller(60), and a power unit(64). The sensor receives an output signal of the converter, displays it as a magnitude of the acceleration energy, and displays an error of the acceleration energy. The controller controls a power supply in order to provide a power corresponding to the acceleration energy. The power unit adjusts a magnitude of a power provided to a particle divider(42) according to an output signal of the controller. Thereby, a product quality is enhanced, and the number of operations is reduced.
申请公布号 KR20000019103(A) 申请公布日期 2000.04.06
申请号 KR19980037031 申请日期 1998.09.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH, SANG GEUN;HAN, SEONG GYUN;KO, YOUNG BEOM
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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