| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation of a capacitive electrode, used in a memory device of a DRAM having a base electrode of two or more different metal films which have a complicated and three-dimensional base electrode shape, and which have a surface area larger than that of its projected portion within the memory device by selectively etching the metal films. SOLUTION: TiN films 23, 25, 27 and Ti films 24, 26, 28 are sequentially and alternately deposited in two or more layers as a multi-layer metal film 29. A contact hole 31 is formed through the multi-layer metal film 29, and the contact hole 31 is blocked by a TiN layer 32. A base electrode pattern 33 is transferred by reactive ion etching onto the multi-layer metal film 29 as a base. The base electrode having a large surface area 34 is formed by removing the Ti layer exposed by Ti selective etching while leaving the TiN layer. |
