UNIFORM DISTRIBUTION MONOENERGETIC ION IMPLANTATION

摘要

A system for implanting ions in an object which has three dimensional topology in a uniform or predetermined pattern is provided by the invention herein. The system includes a vacuum chamber defining an interior space. The interior space includes a first region adjacent to interior walls of the vacuum chamber. The first region being used primarily for plasma protection. The interior space of the vacuum chamber also includes a second region for ion acceleration and the second region is substantially surrounded by the first region. A potential distribution control grid defines the boundary between the first and second regions and the potential distribution control grid is pervious to the passage of ions from the plasma generated in the first region into the second region. An object to be implanted is placed at a predetermined position in the second region and when subjected to a negative voltage charge, draws ions through the potential distribution control grid from the first region into the second region and accelerates them in a uniform manner towards the object to be implanted. The accelerated ions are monoenergetic since they all have the same momentum. The system provides magnetic field to help confine the plasma in the first region but maintains the second region in a relatively magnetic field free state.