发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To relax stresses caused by the difference in terminal expansion between a semiconductor device to which the WPP technology is applied, and a mounting substrate. SOLUTION: A semiconductor device contains a passivation film 9 and a first protective film 10 both of which cover a third-layer wiring M3, a rearranged wiring 12 which is formed on the first protective film 10 and connected to the third-layer wiring M3 via a first connecting hole 11, a second protective film 13 covering the rearranged wiring 12, a bump base metals 2 formed in the second connecting holes 14 of the second protective film 13, and outer leads formed on the bump base metals 2. The outer leads are constituted of first bumps 3 on the bump base metals 2 and second bumps 4 on the first bumps 3.
申请公布号 JP2000091339(A) 申请公布日期 2000.03.31
申请号 JP19980256939 申请日期 1998.09.10
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 KANEDA TAKESHI
分类号 H01L23/52;H01L21/3205;H01L21/60;(IPC1-7):H01L21/320 主分类号 H01L23/52
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