| 摘要 |
PROBLEM TO BE SOLVED: To practically reduce the distance between a channel formation region and a source/drain electrode and lower the resistance between them by forming a first layer, comprising metal and a second layer comprising titanium nitride next thereto and connecting the second layer to the gate insulation film as a gate electrode. SOLUTION: Since the resistance of silicide layer 111 of a thin-film transistor(TFT) is extremely small, the resistance between a channel formation region 104 and a metallic electrode 106 is practically decided by a distance displayed by (x). Since (x) is desirably at most 1μm, resistance is substantially reduced. Therefore, the characteristics of a TFT are improved by reducing the distance between the channel region 104 and a source/drain electrode 106, thereby reducing the resistance between them. Furthermore, since resistance can be made small enough, the amount of impurities doped to the source/drain region 103 can be made small. In this way, characteristics are improved even if doping amount is small way.
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