| 摘要 |
PROBLEM TO BE SOLVED: To form a thin film for a long time by sputtering by projecting a target part high in a sputtering rate more than the sputtering face of a target part low in that and alternately holding and arranging both parts. SOLUTION: An Al target part 1 high in a sputtering rate and a Ta target part 2 low in that are alternately arranged and held by a target holder 3, and the sputtering faces 4 and 5 of the obtd. target are sputtered to form a thin film composed of AlTa. At this time, the Al target part l has a projecting part projecting more than the horizontal place of the sputtering face 5 of the Ta target part 2. Moreover, the Al part l and the Ta part 2 are formed in such a manner that each width is made narrow or wide from the target faces 4 and 5 to the lower directions. In this way, the service life of the sputtering target is prolonged, and the secular compositional change in the thin film can be reduced.
|
